Some hardware design experience summarized by the master (I)

1: What is the forward bias of the diode? Add a positive voltage to the p-segment and a negative voltage to the n-segment. It is a positive bias. The positive bias is that the diffusion current is greatly increased, and the reverse bias causes the drift current to increase. However, the drift current is formed by the movement of the minority carriers, so there is a reverse saturation current.

2: The general low-frequency signal, the thickness of the resistance wire is to flow how much current, and the size of the resistance caused by the thickness is not counted, because the resistance of the copper wire itself is very small, except for special cases.

3: MOS tube is a type of carrier that is dependent on multi-sub-electrons. It is different from the case where the multi-child and the minority of the transistor participate in conduction. It is a self-isolated device that does not require the isolation island in the transistor to save the core area and is suitable for very large-scale circuits. It is characterized by voltage control! The control terminal requires almost no current and is easy to integrate.

4: How to judge the cbe pole of the triode and how to judge the gds of the mos tube

A. Check the information directly.

B. Use the multimeter diode file, p is connected to positive, n is negative when there is a digital display, so there are several measurements, you can know whether it is pnp type or npn type, b end can be determined. Then use the multimeter's hef file to measure the magnification. If the pair is correct, the result can be judged.

In general, the mos tube is connected to the heat sink. It is simple to determine d, add a power in gs, that is, use the multimeter diode to point to gs, and then the amount of ds will have a digital display. If you short-circuit ds, there will be no digits when you go to the amount. Can determine gs.